US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "Thin film transistor including a dielectric diffusion barrier and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,656, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thin film transistor including a dielectric diffusion barrier and methods for forming the same" was invented by Wu-Wei Tsai (Taoyuan City, Taiwan), Yu-Ming Lin (Hsinchu City, Taiwan), Hai-Ching Chen (Hsinchu City, Taiwan) and Sai-Hooi Yeong (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating layer having formed therein a gate electrode and overlying a substrate, a stack of a gate dielectric including a gate dielectric material, a dielectric diffusion barrier liner including a dielectri...