ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,670, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Self-aligned contact structures" was invented by Li-Zhen Yu (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Cheng-Chi Chuang (Taipei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer ...