US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "Methods of forming semiconductor device and dielectric fin" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,678, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of forming semiconductor device and dielectric fin" was invented by Wei-Hao Wu (Hsinchu, Taiwan) and Ying Tsung Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method includes: forming a plurality of fins over a substrate, the plurality of fins comprising: a first semiconductor fin adjacent to an isolation region; and a dielectric fin embedded in the isolation region; depositing a silicon layer over a first surface of the first semiconductor fin, a second surface of the dielectric fin, and a third su...