US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 3 for "Method for forming isolation structure and semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,700, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming isolation structure and semiconductor structure" was invented by Tzung-Yi Tsai (Taoyuan City, Taiwan), Kuo-Yu Wu (Hsinchu County, Taiwan) and Tse-Hua Lu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an isolation structure includes following operations. A trench is formed in a semiconductor substrate. A first insulating layer covering a bottom and sidewalls of the trench is formed. A charge-trapping layer is formed on the first insulating layer. The trench is filled with a second ...