US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 3 for "Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,775, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrate" was invented by Chung-Liang Cheng (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Wen-Ting Lan (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Huang-Lin Chao (Hsinchu, Taiwan) and Pinyen Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for forming a memory device on a backside portion of a wafer substrate. In one step, a circuit device is formed on a fro...