ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,827, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for fabricating device die" was invented by Shih-Wei Chen (Hsinchu, Taiwan), Tzuan-Horng Liu (Taoyuan City, Taiwan), Chia-Hung Liu (Hsinchu City, Taiwan) and Hao-Yi Tsai (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semi...