US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "Memory cell with magnetic access selector apparatus" (Taiwanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,771, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell with magnetic access selector apparatus" was invented by Mauricio Manfrini (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated chip has a memory cell that includes a magnetic tunnel junction (MTJ) device and an access selector apparatus. The MTJ device includes a free layer and a pinned layer. The access selector apparatus includes a first metal structure and a second metal structure separated by one or more non-metallic layers. The first metal structure includes a polarized magnetic layer. The polarized m...