ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,807, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure for semiconductor device and related methods" was invented by Yu-Shan Yeh (Hsinchu, Taiwan), Neng-Jye Yang (Hsinchu, Taiwan) and Kuo-Bin Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure, which may be used for example in a semiconductor device, is disclosed. The interconnect structure includes a contact layer made of a metal; one or more dielectric layers on the contact layer, and a deposited layer made of an insulating material. The interconnect structure further includes a tren...