ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,635, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Static random access memory with write assist circuit" was invented by Hidehiro Fujiwara (Hsinchu, Taiwan), Chih-Yu Lin (Taichung, Taiwan), Sahil Preet Singh (Hsinchu, Taiwan), Hsien-Yu Pan (Hsinchu, Taiwan), Yen-Huei Chen (Hsinchu, Taiwan) and Hung-Jen Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage gen...