US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Stacked transistor isolation features and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,258, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacked transistor isolation features and methods of forming the same" was invented by Ji-Yin Tsai (Zhudong Township, Taiwan), Zheng Hui Lim (Hsinchu, Taiwan), Yen Chuang (Hsinchu, Taiwan), Jet-Rung Chang (Hsinchu, Taiwan), Ta-Chun Ma (New Taipei, Taiwan) and Chii-Horng Li (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a stacked transistor are provided. One representative method may include patterning a first dummy nanostructure, a second dummy nanostructure, and a semiconductor nanostructure. The semiconductor...