US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Spacer structures for nano-sheet-based devices" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,247, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Spacer structures for nano-sheet-based devices" was invented by Shih-Cheng Chen (New Taipei City, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Zhi-Chang Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first source/drain feature and a second source/drain feature over the substrate, a first semiconductor layer and a second semiconductor layer between the first and the second source/drain features, and a gate between the first and the second source/drain feature...