US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Semiconductor memory structure having enhanced memory window and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,213, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory structure having enhanced memory window and method for manufacturing the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Sai-Hooi Yeong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a plurality of memory cells arranged in an array. Each of the memory cells includes a memory region, a word line portion disposed on a first surface of the memory region, a first conductive block disposed on a second surface of the memory region opposite t...