US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Semiconductor device including dual damascene structure and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,441, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including dual damascene structure and method for fabricating the same" was invented by Chien-Han Chen (Nantou County, Taiwan), Hung-Chun Chen (Taipei, Taiwan), Yuan-Chun Chien (Taipei, Taiwan), Wei Tse Hsu (Hsinchu County, Taiwan), Yu-Yu Chen (Hsinchu, Taiwan) and Chien-Chih Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes followings. A metal layer is formed to embedded in a first dielectric layer. An etch stop layer is formed over the metal layer and t...