ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,267, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan) and Chi-On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of semiconductor nanosheets, a bottom dielectric layer, and a gate stack. The substrate includes at least one fin. The plurality of semiconductor nanosheets are stacked on the at least one fin. The bot...