ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,238, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing methods thereof" was invented by Shahaji B. More (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Epitaxial regions may be formed in specific locations on a semiconductor wafer with specific asymmetric properties such as slope or tilt direction, slope or tilt angle, and/or other asymmetric properties. The asymmetric epitaxial regions may be formed using various plasma-based fin structure etching techniques described herein. The specific asymmetric properties may increase metal landing coverag...