US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Multi-layer electrode to improve performance of ferroelectric memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,271, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multi-layer electrode to improve performance of ferroelectric memory device" was invented by Yi Yang Wei (Hsinchu, Taiwan), Bi-Shen Lee (Hsinchu, Taiwan), Hsin-Yu Lai (Hsinchu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Hsing-Lien Lin (Hsin-Chu, Taiwan) and Hsun-Chung Kuang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a memory device including a first bottom electrode layer over a substrate. A ferroelectric switching layer is disposed over the first bottom elec...