US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor" (Belgian, American Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,348, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor" was invented by Timothy Vasen (Linthicum Heights, Md.), Mark Van Dal (Linden, Belgium), Gerben Doornbos (Kessel-Lo, Belgium) and Matthias Passlack (Hayward, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer i...