US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Method for manufacturing semiconductor structure and semiconductor structure thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,256, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor structure and semiconductor structure thereof" was invented by Yong-Sheng Huang (Hsinchu City, Taiwan), Hung-Shu Huang (Taichung City, Taiwan), Jhih-Bin Chen (Hsinchu, Taiwan) and Chung-Huai Chang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first, second and third isolations. The first isolation and a second isolation are disposed in a substrate and substantially parallel to each other, wherein a portion of the substrate is disposed between ...