US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Method for manufacturing for forming source/drain contact features and devices manufactured thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,245, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing for forming source/drain contact features and devices manufactured thereof" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to methods for forming self-aligned source/drain contacts with increased contact size while maintaining the reliability margin between source/drain contacts and gate electrodes. Semiconductor devices according to the present disclosure has contact landing Rc reduction at source/drain contacts as well as device performan...