US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Low-leakage ESD protection circuit and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,294, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Low-leakage ESD protection circuit and operating method thereof" was invented by Tao Yi Hung (Hsinchu, Taiwan), Li-Wei Chu (Hsinchu City, Taiwan), Wun-Jie Lin (Hsinchu City, Taiwan), Jam-Wem Lee (Hsinchu, Taiwan) and Kuo-Ji Chen (Taipei County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device comprises a detection circuit electrically coupled between a first node and a second node. The semiconductor device comprises a discharge circuit electrically coupled between the first no...