ALEXANDRIA, Va., March 24 -- United States Patent no. 12,583,740, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Inter-poly connection for parasitic capacitor and die size improvement" was invented by Shyh-Wei Cheng (Zhudong Township, Taiwan), Chih-Yu Wang (Taichung City, Taiwan), Hsi-Cheng Hsu (Taichung City, Taiwan), Ji-Hong Chiang (Changhua City, Taiwan), Jui-Chun Weng (Taipei City, Taiwan), Shiuan-Jeng Lin (Hsinchu City, Taiwan), Wei-Ding Wu (Zhubei City, Taiwan) and Ching-Hsiang Hu (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or mor...