US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Gate-top dielectric structure for self-aligned contact" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,229, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate-top dielectric structure for self-aligned contact" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Yi-Hsien Chen (Hsinchu County, Taiwan), Wen-Cheng Luo (Taoyuan City, Taiwan), Chung-Ting Li (Hsinchu County, Taiwan), Yi-Shien Mor (Hsinchu, Taiwan) and Chih-Hao Chang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes an active region having a channel region and a source/drain region, a...