US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "FinFET structure with controlled air gaps" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,498, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET structure with controlled air gaps" was invented by Wen-Che Tsai (Hsinchu City, Taiwan), Min-Yann Hsieh (Kaohsiung City, Taiwan), Hua Feng Chen (Hsinchu City, Taiwan) and Kuo-Hua Pan (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically con...