ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,223, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"FinFET MOS capacitor" was invented by Sung-Hsin Yang (Tainan, Taiwan), Jung-Chi Jeng (Tainan, Taiwan) and Ru-Shang Hsiao (Jhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a FinFET MOS capacitor. In some embodiments, the FinFET MOS capacitor comprises a substrate and a capacitor fin structure extending upwardly from an upper surface of the substrate. The capacitor fin structure comprises a pair of dummy source/drain regions separated by a dummy channel region and a ca...