US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Capacitor and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,295, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Capacitor and method for forming the same" was invented by Meng-Han Lin (Hsinchu City, Taiwan) and Meng-Sheng Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure includes a semiconductor substrate, a shallow trench isolation, and a capacitor. The STI is in the semiconductor substrate. The capacitor is over the STI. The capacitor includes first a dummy gate strip, a second dummy gate strip extending in parallel with the first dummy gate strip, a plurality of first metal contacts la...