US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Stress absorbing trench capacitor and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,636, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Stress absorbing trench capacitor and method for forming the same" was invented by Fu-Chiang Kuo (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; forming a trench with a predetermined aspect ratio in the substrate to form two fins, wherein the forming of the trench induces the substrate to warp toward a first direction; forming a metal-insulator-metal (MIM) stack on sidewalls of the two fins in t...