US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Semiconductor device with silicide-embedded stressor source and drain structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,697, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with silicide-embedded stressor source and drain structure" was invented by Shin-Jiun Kuang (Hsinchu City, Taiwan), Yi-Han Wang (Yunlin County, Taiwan), Tsung-Hsing Yu (Taipei, Taiwan) and Yi-Ming Sheu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is between the gate structure and the substrate. The raised source/drain region includes a stressor layer pro...