US Patent Issued to Taiwan Semiconductor Manufacturing on March 17 for "Semiconductor device including multiple stacks of semiconductor nanosheets, multiple strained layers, and dielectric wall located strained layers and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,705, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including multiple stacks of semiconductor nanosheets, multiple strained layers, and dielectric wall located strained layers and method of forming the same" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Tzu-Hung Liu (Yunlin County, Taiwan), Chun-Jun Lin (Hsinchu City, Taiwan), Chih-Hao Chang (Hsin-Chu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, first and second stacks of semiconductor nanosheets, a gate structure, first and se...