US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Semiconductor device and method of manufacturing thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,714, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacturing thereof" was invented by Sheng-Jier Yang (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed, a sacrificial gate structure is formed over the fin structure, a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched thereby forming a source/drain space, a stre...