US Patent Issued to Taiwan Semiconductor Manufacturing on March 17 for "Semiconductor device and method of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,941, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of forming thereof" was invented by Yen-Chih Huang (Hsinchu, Taiwan), Li-An Sun (Hsinchu, Taiwan), Che-En Tsai (Hsinchu, Taiwan), Yu-Lin Chiang (Hsinchu, Taiwan), Chung Chuan Huang (Hsinchu, Taiwan) and Chih-Hao Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first etch stop layer (ESL) over a conductive feature, forming a first dielectric layer on the first ESL, forming a second ESL on the first dielectric layer, forming a second dielectric layer on the second ESL,...