US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Schottky diode and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,673, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Schottky diode and method for forming the same" was invented by Guan-Yi Li (New Taipei, Taiwan), Chia-Cheng Ho (Hsinchu, Taiwan), Chan-Yu Hung (Tainan, Taiwan) and Fei-yun Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first dr...