US Patent Issued to Taiwan Semiconductor Manufacturing on March 17 for "Passivation layers for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,677, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Passivation layers for semiconductor devices" was invented by Cheng-Yi Peng (Taipei City, Taiwan), Ching-Hua Lee (Hsinchu City, Taiwan) and Song-Bor Lee (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between...