ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,703, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Multilayer gate isolation structure" was invented by Hong-Chih Chen (Changhua County, Taiwan), Wei-Chih Kao (Taipei, Taiwan), Chun-Yi Chang (Hsinchu City, Taiwan), Yu-San Chien (Hsinchu City, Taiwan), Hsin-Che Chiang (Taipei City, Taiwan) and Chun-Sheng Liang (Puyan Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes first and second gate structures formed over a semiconductor substrate and a multilayer gate ...