ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,863, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"MRAM fabrication and device" was invented by Jung-Tang Wu (Kaohsiung, Taiwan), Wu Meng Yu (Taichung, Taiwan), Szu-Hua Wu (Zhubei, Taiwan), Chin-Szu Lee (Taoyuan, Taiwan), Han-Ting Tsai (Kaoshiung, Taiwan) and Yu-Jen Chien (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or...