US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Method for gap filling with selectively formed seed layer and heteroepitaxial cap layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,721, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for gap filling with selectively formed seed layer and heteroepitaxial cap layer" was invented by Ya-Wen Chiu (Tainan City, Taiwan), De Jhong Liao (Hsinchu, Taiwan), Yu-Yu Chen (New Taipei City, Taiwan), Szu-Ying Chen (Hsinchu, Taiwan) and Zheng-Yang Pan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method for selectively forming a seed layer over semiconductor fins. Some embodiments provide forming the selective seed layer using a mono-silane at an increased temperatur...