ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,725, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Gate structures for semiconductor devices" was invented by Chung-Liang Cheng (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different configurations of gate structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes first and second gate structures disposed on first and second nanostructured channel regions, respectively. The first gate structure includes a nWFM layer disposed on the first nanostructured channel region, a barrier layer disp...