US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Contact structure manufacturing method" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,939, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Contact structure manufacturing method" was invented by Kam-Tou Sio (Hsinchu, Taiwan), Cheng-Chi Chuang (Hsinchu, Taiwan), Chih-Ming Lai (Hsinchu, Taiwan), Jiann-Tyng Tzeng (Hsinchu, Taiwan), Wei-Cheng Lin (Hsinchu, Taiwan) and Lipen Yuan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit (IC) structure includes forming an opening in a first dielectric material between a first gate structure and a second gate structure by removing a portion of the first dielectric material overlyin...