US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Void-free conductive contact formation" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,822, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Void-free conductive contact formation" was invented by Cheng-Wei Chang (Taipei City, Taiwan), Chien Chang (Hsinchu, Taiwan), Kan-Ju Lin (Kaohsiung City, Taiwan), Harry Chien (Chandler, Ariz.), Shuen-Shin Liang (Hsinchu County, Taiwan), Chia-Hung Chu (Taipei City, Taiwan), Sung-Li Wang (Hsinchu County, Taiwan), Shahaji B. More (Hsinchu City, Taiwan) and Yueh-Ching Pai (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A source/drain component is disposed over an active region and surrounded by a dielectric material. A source/d...