ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,828, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Structure and formation method of semiconductor device with epitaxial structures" was invented by Ka-Hing Fung (Zhudong Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor substrate and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the c...