US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Semiconductor structures with reduced parasitic capacitance and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,845, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structures with reduced parasitic capacitance and methods for forming the same" was invented by Szu-Hua Chen (Tainan City, Taiwan), Cheng-Ming Lin (Kaohsuing City, Taiwan), Wei-Xiang You (Kaohsuing City, Taiwan), Wei-De Ho (Hsinchu City, Taiwan), Wei-Yen Woon (Taoyuan City, Taiwan) and Szuya Liao (Zhubei Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary method includes forming a dummy gate stack engaging a semiconducto...