US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Semiconductor device and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,837, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and methods of fabrication thereof" was invented by Cheng-Wei Chang (Taipei, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Shuen-Shin Liang (Hsinchu, Taiwan), Sung-Li Wang (Hsinchu, Taiwan) and Yi-Ying Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a source/drain epitaxial feature disposed over a substrate, wherein the source/drain epitaxial feature comprises a first epitaxial layer, a second epitaxial layer in contac...