US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Method for forming semiconductor device structure with oxide structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,815, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor device structure with oxide structure" was invented by Chun-Yi Chang (Hsinchu City, Taiwan), Hsiao-Chu Chen (Caotun Township, Taiwan), Hong-Chih Chen (Changhua County, Taiwan), Hsin-Che Chiang (Taipei City, Taiwan), Chun-Sheng Liang (Puyan Township, Changhua County, Taiwan) and Kuo-Hua Pan (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The first gate stack inclu...