US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Backside contact" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,820, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Backside contact" was invented by Li-Zhen Yu (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes an epitaxial source feature and an epitaxial drain feature, a vertical stack of channel members disposed over a backside dielectric layer, the vertical stack of channel ...