US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Semiconductor device including a self-formed barrier metal layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,527, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including a self-formed barrier metal layer" was invented by Shih-Kang Fu (Hsinchu, Taiwan), Hsien-Chang Wu (Hsinchu, Taiwan), Ming-Han Lee (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an interconnect layer disposed over the substrate, a metal line formed in the interconnect layer, a dielectric layer disposed on the interconnect layer, and a via contact formed in the dielectric layer and electrically connected to the metal l...