ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,552, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Passive semiconductor device" was invented by Fu-Chiang Kuo (Hsinchu City, Taiwan), Meei-Shiou Chern (Hsinchu County, Taiwan) and Jyun-Ting Hou (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with capacitive structures and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, first and second trenches disposed in the substrate and separated from each other by a substrate region of the substrate, first, second, and third conductive layers disposed in the first and s...