ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,312, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit device and manufacturing method thereof" was invented by Yi-Syuan Siao (Changhua City, Taiwan), Chien-Yu Lin (Yilan County, Taiwan), Meng-Han Chou (Hsinchu City, Taiwan), Su-Hao Liu (Chiayi County, Taiwan) and Chi On Chui (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating an integrated circuit device includes forming first epitaxial stack comprising a first sacrificial layer and a first channel layer over a substrate; forming a second epitaxial stack comprising a second sacrificial ...