US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Vacancy-rich silicon for use with a gallium nitride epitaxial layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,752, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vacancy-rich silicon for use with a gallium nitride epitaxial layer" was invented by Pu-Fang Chen (Hsinchu City, Taiwan) and Ching Yu Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing process is described to evaluate and select raw semiconductor wafers in preparation for epitaxial layer formation. The manufacturing process first produces a single crystal ingot during which a seed pulling velocity and temperature gradient are closely controlled. The resulting ingot is vacancy-rich with relatively few self-interstit...