US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Treatment of electrodes of MIM capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,632, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Treatment of electrodes of MIM capacitors" was invented by Shin-Hung Tsai (Hsinchu, Taiwan), Chun-Hsiu Chiang (Taipei City, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Da-Yuan Lee (Jhubei City, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first electrode, and depositing a dielectric layer over the first electrode. The dielectric layer has a first dielectric constant and a first thickness. A dielectric capping layer is deposited over the dielectric layer. The dielectric capping la...