ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,647, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor including bottom isolation and manufacturing method thereof" was invented by Jung-Hung Chang (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu, Taiwan), Shih-Cheng Chen (Hsinchu, Taiwan), Chien Ning Yao (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan), Chia-Pin Lin (Hsinchu, Taiwan), Wei-Yang Lee (Hsinchu, Taiwan) and Yen-Sheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor on a substrat...