US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Transistor device with multi-layer channel structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,656, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor device with multi-layer channel structure" was invented by Ya-Yun Cheng (Taichung City, Taiwan), Wen-Ling Lu (Taoyuan County, Taiwan), Yu-Chien Chiu (Hsinchu County, Taiwan), Chung-Wei Wu (Ju-Bei City, Taiwan) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The c...